![]() The Base Emitter junction is a small diode with a reverse breakdown voltage specified at 6 V. This means that if you have a current flow of 1 mA in the base-emitter, there will be a current flow of 200 mA through the collector - emitter. ![]() On the ON Semi Datasheet, see hfe on page 2 for the gain, which is between 50 and 375 for this transistor. A small current from the Base to Emitter causes a large current from the Collector to Emitter. However, I had the original circuit built improperly there, and I'm now wondering if the 2N2222 can take 5 V on its base pin (according to the datasheet).īi-Polar transistors multiply current. * Note This question is directly related to Is it possible to use a NPN BJT as switch, from single power source?. I'm wondering because in my other (referenced question) circuit the transistor became very hot with only 5 V - but that may have been due to being wired improperly, I'm not sure. ![]() Does that mean I should be able to drive a circuit on the collector-emitter side that has up to 40 V on it? From reading the datasheet (below) would you expect that to be too much?Īlso, I see that the secondary (output) circuit of collector-emitter can supposedly take up to 40 V(?). Simulate this circuit – Schematic created using CircuitLabĪccording to the datasheet the emitter-base maximum voltage is 6.0 V. I've been struggling with understanding datasheets for transistors. I have created the following circuit to better understand how to use a transistor as a switch*. ![]()
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